Buffer layer/film interactions in the growth of Tl2Ba2Ca1Cu2Oxfilms on CeO2buffered sapphire
作者:
A. P. Bramley,
S. M. Morley,
C. R. M. Grovenor,
B. Pecz,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 4
页码: 517-519
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114075
出版商: AIP
数据来源: AIP
摘要:
Tl2Ba2Ca1Cu2Oxthin films have been grown on highly textured CeO2layers deposited ontoR‐plane sapphire substrates. The Tl2Ba2Ca1Cu2Oxfilms have critical temperature (Tc) values around 95 K and current density (Jc) values up to 8×104A/cm2. The films arec‐axis oriented even though we have identified the formation of a polycrystalline BaCe(Tl)O3layer by reaction between the buffer layer and the superconducting precursor during the thalliation process. ©1995 American Institute of Physics.
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