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Room‐temperature two‐dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field

 

作者: R. H. Yan,   R. J. Simes,   H. Ribot,   L. A. Coldren,   A. C. Gossard,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 54, issue 16  

页码: 1549-1551

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101326

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The first room‐temperature two‐dimensional heavy hole exciton red shift, greater than 25 meV due to the exchange of Van Hove‐typeM1and quantum well excitons, was observed by photocurrent measurements in molecular beam epitaxy grown superlattices with periods of 30 A˚ GaAs/25 A˚ Ga0.5Al0.5As. At a photon energy of 1.66 eV, a 3000 cm−1absorption change due to the blue shift of the superlattice absorption edge was also observed at room temperature in superlattices with periods of 20 A˚ GaAs/20 A˚ Ga0.5Al0.5As.

 

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