Room‐temperature two‐dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field
作者:
R. H. Yan,
R. J. Simes,
H. Ribot,
L. A. Coldren,
A. C. Gossard,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 16
页码: 1549-1551
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101326
出版商: AIP
数据来源: AIP
摘要:
The first room‐temperature two‐dimensional heavy hole exciton red shift, greater than 25 meV due to the exchange of Van Hove‐typeM1and quantum well excitons, was observed by photocurrent measurements in molecular beam epitaxy grown superlattices with periods of 30 A˚ GaAs/25 A˚ Ga0.5Al0.5As. At a photon energy of 1.66 eV, a 3000 cm−1absorption change due to the blue shift of the superlattice absorption edge was also observed at room temperature in superlattices with periods of 20 A˚ GaAs/20 A˚ Ga0.5Al0.5As.
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