Calculation of the Electronic Structure! of Disordered Hydrogen Adsorption on the Si(111) Surface
作者:
G. V. Gadiyak,
A. A. Karpushin,
I. V. Korolenko,
Yu. N. Morokov,
I. Yu. Semenova,
A. N. Sorokin,
M. Tomášek,
期刊:
physica status solidi (b)
(WILEY Available online 1986)
卷期:
Volume 137,
issue 2
页码: 633-639
ISSN:0370-1972
年代: 1986
DOI:10.1002/pssb.2221370225
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe local density of electronic states is calculated on the (111) surface of silicon with disordered adsorption of atomary hydrogen with an arbitrary degree of coverage. Computations are made by the recursion method and the method of generalized Bethe lattices. The dependence of the electronic density of states on the degree of coverage of the surface by hydrogen is investigated. The results obtained by the recursion method and the generalized Bethe lattice method are compared with those obtained by other methods and by the experiment and a good overall agreement is found. The contribution of hydrogen and silicon atomic states into the electronic structure of the Si(111) surface is analyzed.
点击下载:
PDF
(386KB)
返 回