Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors
作者:
M. Assous,
E. de Berranger,
J.-L. Regolini,
M. Mouis,
C. Hernandez,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 1740-1744
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590046
出版商: American Vacuum Society
关键词: (Si,Ge)
数据来源: AIP
摘要:
High leakage currents at the base-collector junction of heterojunction bipolar transistors have been mentioned by several authors. In this article, we compare two pre-epitaxy cleaning procedures which both allow smooth epitaxy without any extended defects. Using our initial cleaning procedure, we obtained leakage current values in the range of the published results. We show that our results were consistent with the presence of defects induced by the low-energy reactive ion etching involved in this procedure. In contrast, we obtain a very significant reduction of the leakage current using our new all-wet chemical cleaning.
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