We employed deep-level transient spectroscopy to determine the electrical properties of defects introduced in epitaxially grownn-GaAs during dry etching in aSiCl4plasma at different rf powers and plasma pressures. We found thatSiCl4etching introduced two prominent defects, one of which is metastable. Current–voltage measurements demonstrated that high barrier Schottky barrier diodes can be fabricated onSiCl4-etchedn-GaAs surfaces for all power and plasma pressure conditions investigated. The defect concentration decreased and the diode quality improved when etching at lower rf power and higher plasma pressure. ©1997 American Institute of Physics.