Electrical characteristics of regrown interfaces using diethylgallium chloride‐based metalorganic vapor phase epitaxy
作者:
M. A. Tischler,
T. F. Kuech,
A. Palevski,
P. Solomon,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 55,
issue 21
页码: 2214-2216
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.102064
出版商: AIP
数据来源: AIP
摘要:
The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre‐regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2–4)×10−7&OHgr; cm2at both 77 and 300 K. Secondary‐ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium‐based chemistry.
点击下载:
PDF
(375KB)
返 回