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Electrical characteristics of regrown interfaces using diethylgallium chloride‐based metalorganic vapor phase epitaxy

 

作者: M. A. Tischler,   T. F. Kuech,   A. Palevski,   P. Solomon,  

 

期刊: Applied Physics Letters  (AIP Available online 1989)
卷期: Volume 55, issue 21  

页码: 2214-2216

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.102064

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre‐regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2–4)×10−7&OHgr; cm2at both 77 and 300 K. Secondary‐ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium‐based chemistry.

 

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