Initial transient phenomena in the plasma enhanced chemical vapor deposition process
作者:
V. S. Nguyen,
P. H. Pan,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 2
页码: 134-136
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95136
出版商: AIP
数据来源: AIP
摘要:
A strong correlation between a silicon‐rich interface in plasma deposited silicon nitride films with an initial transient phenomena during the plasma enhanced chemical vapor deposition process has been verified using optical emission techniques, plasma voltage potential (Vp) measurements, and Auger depth profile analysis. The data suggested that the silicon‐rich interface may be an intrinsic property of all plasma deposited films examined. This observation was found to be independent of tool type. However, it is possible to reduce the silicon‐rich interface thickness in plasma deposited films by shortening the transient time with judicious choice of tool and deposition conditions.
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