Both epitaxial tetragonal and hexagonal WSi2(t‐WSi2andh‐WSi2) were grown locally on (111)Si. The best epitaxy was obtained in 600–1100 °C two‐step annealed samples. The orientation relationships betweent‐WSi2and Si are [110]WSi2∥[111]Si and (004)WSi2∥(2¯02), whereas those betweenh‐WSi2and Si are [0001]WSi2∥[111]Si and (202¯0)WSi2∥(202¯)Si. Interfacial dislocations, 80 A˚ in spacing, were identified to be of edge type with (1/6)⟨112⟩ Burgers vectors. Two step annealings were found to be effective in improving the epitaxy and relieving the island formation of WSi2on Si. Significant intermixing of W and Si atoms during the preannealing is proposed to account for the effects.