Phonon modes ofZnS1−xTexalloys epitaxially grown on (100) GaAs substrates
作者:
C. X. Jin,
Z. Ling,
D. H. Wang,
D. M. Huang,
X. Y. Hou,
Xun Wang,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 8
页码: 3465-3467
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365043
出版商: AIP
数据来源: AIP
摘要:
ZnS1−xTex(0<x<1)alloys grown on (100) GaAs substrates by molecular beam epitaxy are investigated using the x-ray diffraction and Raman scattering. The frequencies of long wavelength ZnTe-like and ZnS-like longitudinal optical phonons determined from Raman scattering show linear variation with the compositionx. The frequency of the zone-center optical phonons as a function ofxof theZnS1−xTexmixed crystal shows a typical two-mode behavior, which is in good agreement with the theoretical results from a modified random-element isodisplacement model.©1997 American Institute of Physics.
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