GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air‐GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry–Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far‐field angle from 4.4° to 0.7° was measured.