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Evidence for electron‐induced x‐ray emission in sputtering deposition

 

作者: M. Hecq,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 49, issue 8  

页码: 445-446

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97110

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new technique is shown to studyinsituthe chemical composition of sputtered films. The method is based on the x‐ray emission induced by the fast electrons of the sputtering discharge. The sputtering chamber is coupled with a vacuum x‐ray spectrometer. As a demonstration of the method, the Co deposition is studied. The Co L&agr;x‐ray line and the deposition rate (by means of a quartz microbalance) are recorded as a function of time. X‐ray intensity increases quickly during the first minutes of the deposition, then levels off gradually while the deposition rate remains constant. It is speculated that a fraction of a monolayer should be detectable.

 

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