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Inversion-controlled switching mechanism of m.i.s.s. devices

 

作者: G.Sarrabayrouse,   J.Buxo,   A.E.Owen,   A.Munoz Yague,   J-P.Sabaa,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  （IET Available online 1980）
卷期: Volume 127, issue 3  

页码: 119-125

 

年代: 1980

 

DOI:10.1049/ip-i-1.1980.0023

 

出版商: IEE

 

数据来源: IET

 

摘要:

Experiments are reported on the switching characteristics of m.i. Si (n) Si(p+) devices with a thin oxide insulating layer (I). The influence of temperature, light and carrier injection into then-layer are analysed. Theoretical interpretation is based on a model which takes into account the multiplication mechanism which occurs at the Si-SiO2interface when it is inverted.

 

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