首页   按字顺浏览 期刊浏览 卷期浏览 An I-V measurement method and its application for characterizing ferroelectric PZT thin...
An I-V measurement method and its application for characterizing ferroelectric PZT thin films

 

作者: S.C. Lee,   G. Teowee,   R.D. Schrimpf,   D.P. Birnie,   D.R. Uhlmann,   K.F. Galloway,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1994）
卷期: Volume 4, issue 1  

页码: 31-43

 

ISSN:1058-4587

 

年代: 1994

 

DOI:10.1080/10584589408018658

 

出版商: Taylor & Francis Group

 

关键词: ferroelectric;static I-V measurement;fatigue

 

数据来源: Taylor

 

摘要:

A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

 

点击下载:  PDF (556KB)



返 回