Vertical etching of thick SiO2using C2F6‐based reactive ion beam etching
作者:
Achyut Kumar Dutta,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 4
页码: 1456-1459
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588171
出版商: American Vacuum Society
关键词: WAFERS;SILICON OXIDES;ETCHING;CARBON FLUORIDES;ION BEAMS;PLASMA SOURCES;ROUGHNESS;PRESSURE DEPENDENCE;LOW PRESSURE;FLOW RATE;SiO2
数据来源: AIP
摘要:
Anisotropic etching of deep SiO2has been obtained using electron cyclotron resonance–reactive ion beam etching with C2F6gas. The influence of total gas pressure and gas flow rate on the profile control and the roughness due to the etching have been determined. The sidewall angle of etched profile can be tailored by adjusting the processing conditions, and it is found that a sidewall angle of 90° for an etching of deepness around 18 μm is obtained at a pressure of 1.0 mTorr and a gas flow rate of 35 sccm. Low roughness has also been achieved for a pressure of 1.0 mTorr with the gas flow rate ranging from 25 to 40 sccm. Here, the scanning electron microscope and the scanning tunneling microscope have been used to study the etched profile and the roughness, respectively.
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