首页   按字顺浏览 期刊浏览 卷期浏览 Reverse Breakdown in In‐Ge Alloy Junctions
Reverse Breakdown in In‐Ge Alloy Junctions

 

作者: D. R. Muss,   R. F. Greene,  

 

期刊: Journal of Applied Physics  (AIP Available online 1958)
卷期: Volume 29, issue 11  

页码: 1534-1537

 

ISSN:0021-8979

 

年代: 1958

 

DOI:10.1063/1.1722988

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Experimental information is presented which shows that abruptp+njunctions break down by the Zener internal field emission effect when the base resistivity is low and by ionization avalanche when the base resistivity is high. In intermediate regions of base resistivity both mechanisms are observed in the same junction. The onset of Zener current is accompanied by a drop, of unexplained origin, in the junction collection efficiency for minority carriers photoinjected into the base. Applicability of the Zener theory to abruptp+njunctions is discussed.

 

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