Reverse Breakdown in In‐Ge Alloy Junctions
作者:
D. R. Muss,
R. F. Greene,
期刊:
Journal of Applied Physics
(AIP Available online 1958)
卷期:
Volume 29,
issue 11
页码: 1534-1537
ISSN:0021-8979
年代: 1958
DOI:10.1063/1.1722988
出版商: AIP
数据来源: AIP
摘要:
Experimental information is presented which shows that abruptp+njunctions break down by the Zener internal field emission effect when the base resistivity is low and by ionization avalanche when the base resistivity is high. In intermediate regions of base resistivity both mechanisms are observed in the same junction. The onset of Zener current is accompanied by a drop, of unexplained origin, in the junction collection efficiency for minority carriers photoinjected into the base. Applicability of the Zener theory to abruptp+njunctions is discussed.
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