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Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs

 

作者: M. P. Patkar,   T. P. Chin,   J. M. Woodall,   M. S. Lundstrom,   M. R. Melloch,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 66, issue 11  

页码: 1412-1414

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113218

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Exsitunonalloyed ohmic contacts were made ton‐ andp‐type GaAs using low‐temperature molecular beam epitaxy. Forn‐type GaAs, Ag, and Ti/Au nonalloyed contacts displayed specific contact resistitivities of mid 10−7&OHgr; cm2. Forp‐type GaAs, nonalloyed Ti/Au contacts with specific contact resistivities of about 10−7&OHgr; cm2were obtained. ©1995 American Institute of Physics.

 

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