The chemisorption ofH2C[Si(CH3)3]2andSi6(CH3)12on Si(100) surfaces
作者:
D. G. J. Sutherland,
L. J. Terminello,
J. A. Carlisle,
I. Jime´nez,
F. J. Himpsel,
K. M. Baines,
D. K. Shuh,
W. M. Tong,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 7
页码: 3567-3571
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365759
出版商: AIP
数据来源: AIP
摘要:
The chemisorption of bis(trimethylsilyl)methane (BTM,CH2[Si(CH3)3]2) and dodecamethylcyclohexasilane (DCS,Si6(CH3)12) on clean Si(100) surfaces has been studied by C1score-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a–CH2Si(CH3)3surface moiety for room-temperature adsorption, which further decomposes upon annealing to 550 °C to form a surface terminated primarily byCHxunits. DCS deposits almost three times as much C on the surface as BTM. The data are consistent with DCS undergoing a ring opening and bonding to the surface as polydimethylsilane chains. Annealing both adsorbates to 950 °C causes a large decrease in the C1ssignal due to the fact that Si segregates to the surface at temperatures above 900 °C. The valence-band photoemission of Si(100) dosed with DCS at 950 °C is in good agreement with that of &bgr;-SiC, whereas the analogous BTM spectrum deviates significantly.
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