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Semiconductor diodes as voltage-sensitive resistors

 

作者: N.J.Herbert,  

 

期刊: Proceedings of the IEE - Part B: Electronic and Communication Engineering  (IET Available online 1962)
卷期: Volume 109, issue 21S  

页码: 41-46

 

年代: 1962

 

DOI:10.1049/pi-b-2.1962.0008

 

出版商: IEE

 

数据来源: IET

 

摘要:

Voltage-sensitive resistors which utilize the inherent properties of semiconductor junctions to achieve useful non-linear properties are generally referred to in the United States as diodes or varistors. Which term is chosen depends on the symmetry of the voltage/current characteristic of the device. If it is non-symmetrical with respect to the origin of the co-ordinate axes, it is a diode; if it is symmetrical, it is a varistor.The paper presents the electrical and thermal characteristics, as well as the general method of fabrication, of a variety of diodes and varistors which have been developed over the past five years. Included are devices intended for use as regulators, limiters (both fractional-voltage and multiple-voltage), surge and lightning protectors, modulators and demodulators, and voltage references. Comparisons are made between voltage-sensitive resistors made from copper oxide and silicon carbide and new devices, particularly those made by diffusion techniques in silicon.For critical voltage-reference applications, diodes have been developed which have extremely low temperature coefficients, comparable to the best standard references now available. A description of these, and of the reliability of semiconductor diodes in general, is also given.

 

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