A systematic study of arsenic redistribution in Ni, Cr, Ta silicide forming systems has been performed by implanting arsenic into metal layers or into single‐crystal silicon substrates. During silicide formation arsenic accumulates near the interface region, incorporates in the silicide, or diffuses out of the silicide into the surrounding ambient. Differences in the dopant redistribution are related to the arsenic initial location relative to the moving species in silicide formation and the diffusivity of dopant atoms at the metal‐silicon reaction temperature.