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Calculations of implanted-ion range and energy-deposition distributions:11B in Si

 

作者: K.B. Winterbon,  

 

期刊: Radiation Effects  (Taylor Available online 1976)
卷期: Volume 30, issue 4  

页码: 199-206

 

ISSN:0033-7579

 

年代: 1976

 

DOI:10.1080/00337577608240822

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The integro-differential equations for moments of range and energy-deposition distributions of heavy ions implanted into amorphous targets are solved by an improved method, allowing accuracy to be retained to higher energies. Correlation of electronic stopping with scattering is found to have negligible effects on the calculated distributions for those scattering cross sections for which uncorrelated-stopping calculations are meaningful; however inclusion of correlation allows a wider range of scattering potentials to be used in the calculations. Effects of varying this potential are explored and it is indicated that a careful study of the collision cascade could provide information about the potential.

 

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