Calculations of implanted-ion range and energy-deposition distributions:11B in Si
作者:
K.B. Winterbon,
期刊:
Radiation Effects
(Taylor Available online 1976)
卷期:
Volume 30,
issue 4
页码: 199-206
ISSN:0033-7579
年代: 1976
DOI:10.1080/00337577608240822
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The integro-differential equations for moments of range and energy-deposition distributions of heavy ions implanted into amorphous targets are solved by an improved method, allowing accuracy to be retained to higher energies. Correlation of electronic stopping with scattering is found to have negligible effects on the calculated distributions for those scattering cross sections for which uncorrelated-stopping calculations are meaningful; however inclusion of correlation allows a wider range of scattering potentials to be used in the calculations. Effects of varying this potential are explored and it is indicated that a careful study of the collision cascade could provide information about the potential.
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