The total oxygen content of a number of doped and undoped GaP crystals grown by the liquid encapsulated Czochralski technique has been determined using 10‐MeV He3beams. The level of oxygen ranges from 2 × 107to 5 × 1017atoms/cm3for the undoped ingots. Oxygen concentrations at the tail ends of the crystals were approximately twice those at the seed ends of the same crystals. A slight increase in oxygen concentration was also found toward the center region of a circular slice of the crystal. Ga2O3‐doped crystals contained up to five times more oxygen([inverted lazy s]2×1018)than undoped crystals. The systematic increase of the total oxygen solubility as a function of the concentration of Ga2O3added for the growth was also investigated. These results were then compared with total oxygen incorporated in crystals grown by vapor‐phase epitaxy.