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Shallow junctions for 0.1 μmn‐type metal–oxide semiconductor devices

 

作者: R. K. Watts,   H. S. Luftman,   F. A. Baiocchi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 1  

页码: 515-523

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586385

 

出版商: American Vacuum Society

 

关键词: P−N JUNCTIONS;MOSFET;GATES;SILICON;WAFERS;BORON ADDITIONS;ARSENIC ADDITIONS;ANTIMONY ADDITIONS;CRYSTAL DOPING;FABRICATION;Si:(B:As:Sb);Si:B;Si:Sb;Si:As

 

数据来源: AIP

 

摘要:

Then+/pjunctions for 0.1‐μm‐gaten‐type metal–oxide semiconductor must be no deeper than about 30 nm in order to preserve long‐channel behavior in the enhancement mode metal–oxide semiconductor field‐effect transistor. We report junctions formed by implantation of antimony or arsenic of depth 16–64 nm. They have been characterized by secondary ion mass spectroscopy, Rutherford backscattering spectroscopy lattice location studies, transmission electron microscopy, and electrical measurements.

 

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