The change in electroluminescence intensity as a function of hydrostatic pressure is measured for N‐doped GaAs1−xPxdiodes in the composition regionsx∼0.48 and ∼0.65. A large decrease with pressure is observed for the short‐range N transition (x∼0.48) reflecting the effect of the nearby &Ggr; conduction band edge. The longer‐range NXtransition (x∼0.65) is observed to be much less sensitive to pressure, which agrees with the expected smaller effect of &Ggr; on NXat this composition. Based on N and NXoscillator strengths provided by a recent theoretical model for GaAs1−xPx : N, calculations of the relative change in external quantum efficiency are found to fit the data well.