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DOPANT DEPENDENCY OF FERMI LEVEL LOCATION IN HEAVILY DOPED SILICON

 

作者: T. F. Tao,   Yukun Hsia,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 13, issue 9  

页码: 291-292

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1652617

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Results obtained from the study of the incremental conductance of metal to heavily dopedn‐type Si barrier tunneling as a function of bias voltage are presented. The Si is variously doped with P, As, and Sb. Experimental data indicate that the location of Fermi level is strongly dependent on dopant types.

 

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