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Studies of ferroelectric heterostructure thin films and interfaces, viain situ analyticaltechniques

 

作者: Orlando Auciello,   AlanR. Krauss,   Jaemo Im,   Anil Dhote,   DieterM. Gruen,   EugeneA. Irene,   Ying Gao,   AlexH. Mueller,   Ramamoorthy Ramesh,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 2000）
卷期: Volume 28, issue 1-4  

页码: 1-12

 

ISSN:1058-4587

 

年代: 2000

 

DOI:10.1080/10584580008222216

 

出版商: Taylor & Francis Group

 

关键词: in situ characterization;ferroelectric films;ion scattering;recoil spectroscopy;spectroscopic ellipsometry;SFM piezoresponse;X-ray scattering

 

数据来源: Taylor

 

摘要:

The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as “smart cards”, while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementaryin situcharacterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructures and properties.

 

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