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Simultaneous measurement of spontaneous emission rate, nonlinear gain coefficient, and carrier lifetime in semiconductor lasers using a parasitic‐free optical modulation technique

 

作者: J. Eom,   C. B. Su,   J. LaCourse,   R. B. Lauer,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 6  

页码: 518-520

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102754

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An optical modulation technique is used to determine three important parameters for 1.3 &mgr;m InGaAsP diode lasers: the rate of spontaneous emission into the guided modes, the nonlinear gain coefficient, and the carrier lifetime at threshold. These results are unaffected by electrical parasitics, and are essential to understanding the noise and modulation properties of diode lasers.

 

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