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The use of si surface barrier detectors for energy calibration of mev ion accelerators

 

作者: J.B. Mitchell,   S. Agami,   J.A. Davies,  

 

期刊: Radiation Effects  (Taylor Available online 1976)
卷期: Volume 28, issue 3-4  

页码: 133-139

 

ISSN:0033-7579

 

年代: 1976

 

DOI:10.1080/00337577608237431

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A study of Si detector response has been carried out using beams of monoenergetic (0.5–2.5 MeV) H and4He ions backscattered from a thick gold target, in an attempt to determine if the resulting pulse height could be used as an energy calibration technique. At each chosen energy, the accelerator had been calibrated to within 0.5 kV by means of a suitable nuclear resonance reaction. After applying small corrections for the nuclear (i.e. non-ionizing) energy loss, and for the energy loss in traversing the surface dead layer of the detector, the observed pulse heights are found to be exactly proportional to the energy of the incident H or He ion, within the experimental reproducibility of 0.2%. In the case of4He ions, the linearity of detector response was verified up to 5.48 MeV by means of a standard241Am radioactive source. One strange anomaly is that the energy ϵ to create an electron-hole pair in silicon is significantly smaller for He (and6Li) than for H ions: namely, ϵHe/ϵH= 0.989 and ϵLi/ϵH=0.967. Various mechanisms proposed to explain this difference are not consistent with the observedlineardependence on particle energy. A comparison between H and D ions and between3He and4He ions showed that this difference in detector response was not related to the mass of the incident ion.

 

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