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Electroabsorptive modulators in InGaAs/AlGaAs

 

作者: B. Pezeshki,   S. M. Lord,   J. S. Harris,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 8  

页码: 888-890

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105266

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Theoretical and experimental work shows that electroabsorption improves and the quantum‐confined Stark effect becomes stronger in In0.2Ga0.8As/AlxGa1−xAs quantum wells as the aluminum concentration (x) is increased in the barriers. This improved electroabsorption was used in a reflection modulator that exhibited the largest reported reflectivity change of 77%.

 

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