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The electrical properties of metal contact Au and Ti onp‐type HgCdTe

 

作者: G. Bahir,   R. Adar,   R. Fastow,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 2  

页码: 266-272

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585605

 

出版商: American Vacuum Society

 

关键词: PHOTODIODES;FABRICATION;SCHOTTKY BARRIER DIODES;BARRIER HEIGHT;CHARGE TRANSPORT;GOLD;TITANIUM;AUGER ELECTRON SPECTROSCOPY;INTERFACE STATES;Au;Ti

 

数据来源: AIP

 

摘要:

Schottky barrier photodiodes have been fabricated onp‐type Hg1−xCdxTe, compositionx=0.22 and carrier concentration from 6×1015to 5×1016cm−3, with Au and Ti as contact metals. It has been found that Au barrier height is lower than that of Ti for all carrier concentrations. Low temperature annealing, 75 °C for 24 h, reduces the effective Au barrier height and raises the Ti barrier height. The electrical results are correlated with Auger depth profiling of the difference interfaces, and transport mechanisms are proposed.

 

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