Se chemical passivation and annealing treatment for GaAs Schottky diode
作者:
Huaiqi Xu,
Sai¨d Belkouch,
Cetin Aktik,
Wolfgang Rasmussen,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 16
页码: 2125-2127
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113924
出版商: AIP
数据来源: AIP
摘要:
A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sxpassivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sxpassivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height. ©1995 American Institute of Physics.
点击下载:
PDF
(63KB)
返 回