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Composition modulated structures in bulk‐growth Hg0.8Cd0.2Te

 

作者: X. Z. Liao,   T. S. Shi,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 16  

页码: 2089-2091

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113912

 

出版商: AIP

 

数据来源: AIP

 

摘要:

High‐resolution transmission electron microscopy and selected area electron diffraction have been used to study Hg0.8Cd0.2Te wafer. Two kinds of chemical composition modulated structures were found. One is a one‐dimensional modulation with modulated wave vectorq*=(a*−b*)/5.6 and the other two‐dimensional modulation with modulated wave vectorsq1*=(a*−b*)/5.6 andq2*=(a*−b*)/11.2−0.22c*. Both structures have a common modulated wavelength of 2.54 nm. ©1995 American Institute of Physics.

 

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