New long‐wavelength photodetector based on reverse‐biased doping superlattices
作者:
Y. Horikoshi,
A. Fischer,
K. Ploog,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 9
页码: 919-921
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95460
出版商: AIP
数据来源: AIP
摘要:
A new GaAs photodetector of low capacitance and with high sensitivity in the whole 0.8–1.4‐&mgr;m wavelength range has been fabricated from GaAs doping superlattices grown by molecular beam epitaxy. The highly doped yet semi‐insulating superlattice allows application of high reverse bias via selectiven+andp+electrodes also at room temperature. The excellent photoresponse of the totally depleted device at energies far below the GaAs energy gap arises from the existence of pronounced tail states in the forbidden gap region of the superlattice. Under operating conditions the capacitance of the detector depends only on the electrode geometry and can thus be kept extremely low. This implies high‐speed response of the device.
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