Application of x‐ray reflectometry in study of nonideal Si/Si1−x‐Gexsuperlattices
作者:
J.‐M. Baribeau,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 9
页码: 4452-4454
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352185
出版商: AIP
数据来源: AIP
摘要:
X‐ray reflectometry and double‐crystal diffraction have been applied to the characterization of molecular beam epitaxy‐grown Si/Si1−xGexsuperlattices. It is shown, using specific examples, how reflectometry can help to solve difficulties encountered in double‐crystal diffractometry analysis of nonideal superlattices that contain thickness fluctuations or in which partial strain relaxation has occurred.
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