Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells
作者:
J. Cˇerne,
J. Kono,
T. Inoshita,
M. Sherwin,
M. Sundaram,
A. C. Gossard,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 26
页码: 3543-3545
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119227
出版商: AIP
数据来源: AIP
摘要:
GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency&ohgr;nirand intense far-infrared (FIR) radiation from a free-electron laser at&ohgr;fir.Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at&ohgr;sideband=&ohgr;nir±2&ohgr;fir.The intensity of the sidebands is enhanced when either&ohgr;sidebandor&ohgr;niris near the onset of NIR absorption in the quantum well, or when&ohgr;firis near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100. ©1997 American Institute of Physics.
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