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Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

 

作者: J. Cˇerne,   J. Kono,   T. Inoshita,   M. Sherwin,   M. Sundaram,   A. C. Gossard,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 70, issue 26  

页码: 3543-3545

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119227

 

出版商: AIP

 

数据来源: AIP

 

摘要:

GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency&ohgr;nirand intense far-infrared (FIR) radiation from a free-electron laser at&ohgr;fir.Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at&ohgr;sideband=&ohgr;nir±2&ohgr;fir.The intensity of the sidebands is enhanced when either&ohgr;sidebandor&ohgr;niris near the onset of NIR absorption in the quantum well, or when&ohgr;firis near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100. ©1997 American Institute of Physics.

 

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