Optimization of gate dopant concentration and microstructure for improved electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides
作者:
Anthony I. Chou,
Kafai Lai,
Kiran Kumar,
Jack C. Lee,
Mark Gardner,
Jim Fulford,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 7
页码: 934-936
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116948
出版商: AIP
数据来源: AIP
摘要:
We study the effects of gate dopant species (boron, arsenic, or phosphorous) concentration (1×1019cm−3–1×1021cm−3) and microstructure (as‐deposited amorphous or polycrystalline silicon gate) on the electrical and reliability characteristics of ultrathin oxides and N2O oxynitrides (60 A˚). In order to minimize polysilicon depletion, a high gate dopant concentration is desirable. However, for devices with BF2doped gates, it is found that because of boron penetration through the thin gate oxide, device characteristics degrade as the gate doping concentration increases, thus an intermediate gate doping must be chosen. In contrast, samples with arsenic and phosphorous doped gates show no degradation as the doping level increases. Optimization of gate microstructure for N2O and O2dielectrics is also discussed. ©1996 American Institute of Physics.
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