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Thermal conductivity and electrical properties of 6Hsilicon carbide

 

作者: E. A. Burgemeister,   W. von Muench,   E. Pettenpaul,  

 

期刊: Journal of Applied Physics  (AIP Available online 1979)
卷期: Volume 50, issue 9  

页码: 5790-5794

 

ISSN:0021-8979

 

年代: 1979

 

DOI:10.1063/1.326720

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Thermal conductivity measurements of 6HSiC crystals were done in the 300–500 K range by means of radiation thermometry. Bothp‐ andn‐type crystals with carrier concentrations in the 8×1015to 1020cm−3range were used. For the purest samples it was found that the thermal conductivity normal to thecaxis is proportional toT−1.49, the room‐temperature value being 3.87 W/cm deg. It was also found that the thermal conductivity parallel to thecaxis is about 30% lower than that normal to thecaxis. Electrical data in the 100–1000 K range are also presented.

 

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