Thermal conductivity and electrical properties of 6Hsilicon carbide
作者:
E. A. Burgemeister,
W. von Muench,
E. Pettenpaul,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 9
页码: 5790-5794
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326720
出版商: AIP
数据来源: AIP
摘要:
Thermal conductivity measurements of 6HSiC crystals were done in the 300–500 K range by means of radiation thermometry. Bothp‐ andn‐type crystals with carrier concentrations in the 8×1015to 1020cm−3range were used. For the purest samples it was found that the thermal conductivity normal to thecaxis is proportional toT−1.49, the room‐temperature value being 3.87 W/cm deg. It was also found that the thermal conductivity parallel to thecaxis is about 30% lower than that normal to thecaxis. Electrical data in the 100–1000 K range are also presented.
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