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Nanometer lithography for III–V semiconductor wires using chloromethylated poly‐α‐methylstyrene resist

 

作者: B. E. Maile,   A. Forchel,   R. Germann,   A. Menschig,   H. P. Meier,   D. Grützmacher,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 6  

页码: 2308-2311

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584076

 

出版商: American Vacuum Society

 

关键词: WIRES;LITHOGRAPHY;PHOTOLUMINESCENCE;INDIUM PHOSPHIDES;INDIUM ARSENIDES;GALLIUM ARSENIDES;ALUMINIUM ARSENIDES;FABRICATION;RECOMBINATION;resist

 

数据来源: AIP

 

摘要:

Chloromethylated poly‐α‐methylstyrene negative resist was investigated for its suitability in the fabrication of nanometer structures for optical studies. Investigating the photoluminescence efficiency of etched GaAs/AlGaAs wires we find a steep decrease with decreasing wire width, whereas for InGaAs/InP the decrease is much smaller. The difference in the behavior of the material systems can be explained by the effectiveness of surface recombination.

 

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