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Cryostat for Irradiating at 4.2°K

 

作者: A. Sosin,   H. H. Neely,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1961）
卷期: Volume 32, issue 8  

页码: 922-924

 

ISSN:0034-6748

 

年代: 1961

 

DOI:10.1063/1.1717562

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A cryostat for irradiating at 4.2°K is described. In this device, it is possible to irradiate samples with no intervening foils, to measure at 4.2°K, to study annealingin situto over 100°K, and to achieve recovery beyond 350°K. A sample holder utilizing the high thermal conductivity of copper and sapphire is discussed.

 

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