Location of Si-interstitials in radiation damaged Si-crystals with double alignment channeling technique
作者:
K. Morita,
H.D. Carstanjen,
期刊:
Radiation Effects
(Taylor Available online 1976)
卷期:
Volume 28,
issue 1-2
页码: 97-101
ISSN:0033-7579
年代: 1976
DOI:10.1080/00337577608233033
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
In a double alignment backscattering channeling experiment the angular dependence (for detector rotation) of helium ions-backscattered from a radiation damaged silicon crystal at room temperature-has been studied. The 1.5 MeV He+-beam was incident on the specimen parallel to <110>, the backscattered ions were registered on plastic films in the blocking directions [110], [010] and [111] and in small angular ranges around these blocking directions. The position of silicon interstitials is discussed by comparing the backscattering yield profiles-obtained as a function of emission angle from the spatial distribution of ion tracks on the plastic films-with calculated yield profiles on the computer simulations.
点击下载:
PDF (356KB)
返 回