Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
作者:
I. H. Campbell,
D. E. Watkins,
D. L. Smith,
S. Subbanna,
H. Kroemer,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 14
页码: 1711-1713
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106226
出版商: AIP
数据来源: AIP
摘要:
We present electrooptic modulation results on [100], [211]A and [211]B oriented InGaAs/GaAs multiple quantum wells. Internal electric fields are generated by a combination of strain, due to lattice mismatch, and the piezoelectric properties of III‐V semiconductors in the [211] structures. These fields have opposite orientation in the [211]A and [211]B samples. They do not occur in the [100] samples. The total electric field is a superposition of the strain‐generated field, the built‐in field from thep‐njunction and any externally applied field. We show that whereas in the conventional [100] structures the exciton energy is a quadratic function of applied field, the strain‐generated fields cause a linear shift in the exciton resonance with applied field in the [211] structures. In addition, the direction of the excitonic shift is opposite in the [211]A and [211]B samples, because the sign of the strain‐generated fields are opposite for these samples.
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