CO2laser annealing characteristics of high‐dose boron‐ and arsenic‐implanted silicon
作者:
P. H. Tsien,
J. Go¨tzlich,
H. Ryssel,
I. Ruge,
期刊:
Journal of Applied Physics
(AIP Available online 1982)
卷期:
Volume 53,
issue 1
页码: 663-668
ISSN:0021-8979
年代: 1982
DOI:10.1063/1.329974
出版商: AIP
数据来源: AIP
摘要:
The CO2laser annealing characteristics of high‐dose boron‐ and arsenic‐implanted silicon were studied by isothermal annealing experiments. A different annealing behavior at different annealing temperatures was found. At high annealing temperatures, a complete electrical activation was achieved, but after a prolonged annealing time, a relaxation of metastable concentrations takes place. At low doses, this phenomenon does not occur. The electrical activation energy is 5.8 eV for boron‐implanted silicon (1.3×1016cm−2, 120 keV), for annealing temperatures between 1045 and 1140 ° C.
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