Measurement of the mean electron‐hole pair creation energy in crystalline silicon for photons in the 50–1500 eV spectral range
作者:
F. Scholze,
H. Rabus,
G. Ulm,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 20
页码: 2974-2976
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117748
出版商: AIP
数据来源: AIP
摘要:
This letter reports a measurement of the mean electron‐hole pair creation energy in crystalline silicon using photons in the 50–1500 eV spectral range. A cryogenic electrical substitution radiometer in combination with monochromatized synchrotron radiation was used to determine the spectral responsivity of silicon photodiodes in this spectral range with a relative uncertainty of less than 0.3%. The mean electron‐hole pair creation energy has been determined from these measurements and in contrast to recent theoretical and experimental results a constant value of (3.64±0.03) eV was obtained in accordance with a calculation presented here. ©1996 American Institute of Physics.
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