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Measurement of the mean electron‐hole pair creation energy in crystalline silicon for photons in the 50–1500 eV spectral range

 

作者: F. Scholze,   H. Rabus,   G. Ulm,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 20  

页码: 2974-2976

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117748

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This letter reports a measurement of the mean electron‐hole pair creation energy in crystalline silicon using photons in the 50–1500 eV spectral range. A cryogenic electrical substitution radiometer in combination with monochromatized synchrotron radiation was used to determine the spectral responsivity of silicon photodiodes in this spectral range with a relative uncertainty of less than 0.3%. The mean electron‐hole pair creation energy has been determined from these measurements and in contrast to recent theoretical and experimental results a constant value of (3.64±0.03) eV was obtained in accordance with a calculation presented here. ©1996 American Institute of Physics.

 

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