Undopedn‐GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinicalp(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps,En1,En2,En4, andEn5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1for theEn1 to 11 cm−1for theEn5. It was found that theEn1,En2, andEn4 defects have DLTS ‘‘signatures’’ similar to theE1,E2, andE3 point defects introduced during high energy electron irradiation, indicating their point defect nature. TheEn5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band‐like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.