Rapid direct writing of high‐aspect ratio trenches in silicon: Process physics
作者:
G. V. Treyz,
R. Beach,
R. M. Osgood,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 1
页码: 37-44
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.583958
出版商: American Vacuum Society
关键词: ETCHING;SEMICONDUCTOR MATERIALS;ION COLLISIONS;PHOTON COLLISIONS;CHLORINE MOLECULES;POLARIZATION;LASERS;SILICON;VLSI;INTEGRATED CIRCUITS;MAN
数据来源: AIP
摘要:
The processes governing direct‐write etching of semiconductors with halogen gases are studied by concentrating on a specific materials system: the etching of silicon using the output from an argon‐ion laser and chlorine gas to form high‐aspect ratio trenches. Specifically, the effects of laser power, laser polarization, laser scan velocity, Cl2‐gas pressure, and the addition of buffer gases on the trench formation process have been studied. A simple model has been developed which relates trench depth and these parameters. Model results are presented and compared with experimental data.
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