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Electrical properties of GaAs/GaN/GaAs semiconductor‐insulator‐semiconductor structures

 

作者: G. Martin,   S. Strite,   J. Thornton,   H. Morkoc¸,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 21  

页码: 2375-2377

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104875

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on the current‐voltage (IV) characteristics of GaAs/GaN/GaAs semiconductor‐insulator‐semiconductor structures as a function of temperature.IVmeasurements show a strong temperature dependence indicating a thermal distribution of carriers flowing over a barrier. From these data we deduce an effective conduction band barrier of 0.9 eV between GaAs and GaN.

 

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