Transport properties of hexagonal and tetragonal MoSi2thin films
作者:
J. W. C. de Vries,
A. H. van Ommen,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 64,
issue 2
页码: 749-752
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341918
出版商: AIP
数据来源: AIP
摘要:
The electrical resistivity and the Hall coefficient of thin polycrystalline MoSi2films were measured as a function of temperature from 4.2 to 300 K. The transverse and longitudinal magnetoresistances have been determined at temperatures between 2 and 50 K at fields up to 10 T. Samples of both the high‐temperature tetragonal MoSi2phase and the low‐temperature hexagonal phase have been prepared. The Hall coefficient of tetragonal MoSi2changes sign with temperature, which means that this compound is a multiband conductor, and thus no reliable value for the carrier concentration can be derived from Hall measurements alone. Magnetoresistance data have therefore been analyzed with a simple two‐band model in order to determine the dominant carrier type in both MoSi2structures. In tetragonal MoSi2, electrons and holes are present in equal concentrations, whereas in hexagonal MoSi2holes are the dominating type of carrier.
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