Semiconductor Raman laser
作者:
J. Nishizawa,
K. Suto,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 5
页码: 2429-2431
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328012
出版商: AIP
数据来源: AIP
摘要:
The semiconductor Raman laser has been realized by using a GaP crystal. Pumping is made by aQ‐switched YAG laser operating at 1.064 &mgr;m. The round‐trip loss in the Fabry‐Perot resonator is 2% or less. The Raman scattering from LO phonons stimulates in the 〈100〉 direction, while the forward and backward Raman scattering from TO phonons stimulate in the 〈110〉 direction. This semiconductor Raman laser is promising as a semiconductor far‐infrared radiation source.
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