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Atomic layer epitaxy deposition processes

 

作者: S. M. Bedair,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 1  

页码: 179-185

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587179

 

出版商: American Vacuum Society

 

关键词: THIN FILMS;SILICON;FILM GROWTH;MONOLAYERS;III−V SEMICONDUCTORS;VPE;Si

 

数据来源: AIP

 

摘要:

Atomic layer epitaxy (ALE) is emerging as a promising epitaxial growth technique for thickness control at the atomic level. The article outlines recent progress in ALE of III–V and Si thin films. Also models describing the self‐limiting processes will be outlined.

 

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