We present initial results of a study whose goal is to develop a process leading to SiC p-layers compatible with a superstrate p-i-n cell structure, deposited in an RF PECVD system. Experimental variables were dopant gas,CH4andH2gas flows normalized to the sum ofSiH4andCH4flows, and the power. Compared toB2H6,doping withB(CH3)3lowered the conductivity by a factor of 40 and reduced the fraction of crystallinity from 87&percent; to 53&percent;. The c-Si fraction decreased strongly with increasingCH4flow. No evidence of Si-C bonding was identified in the Raman spectra of these samples. Finally, it has been demonstrated that high conductivity p-layers (>1 S/cm) having high c-Si volume fraction (∼85&percent;) can be deposited on glass at low power density (84 mW/cm2) which is compatible with deposition on TCO substrates for device fabrication. ©1999 American Institute of Physics.