The resistive transition in epitaxialc‐axis‐oriented HgBa2CaCu2O6+&dgr;(Hg‐1212) thin filmsTc∼122 K) in magnetic fields up to 9 T have been investigated. A considerably larger broadening of the resistive transition is observed for magnetic fields perpendicular to theabplane than for fields parallel to theabplane. Over the measured range of magnetic fields, the resistivity exponentially approaches zero as a function of decreasing temperature, suggesting a thermally activated flux creep behavior. The anisotropic characteristics of Hg‐1212 are compared with other high‐temperature cuprate superconductors and found to be less than for the Bi or Tl two‐layer systems, but still considerably larger than forYBa2Cu3O7−&dgr;. This can be qualitatively explained on the basis of the differences in the insulator spacing layer thickness between the adjacentCuO2layers in these cuprates. ©1995 American Institute of Physics.